Design of a ternary memory cell using cntfets

WebJan 1, 2024 · In this paper, a robust ternary SRAM (TSRAM) cell is designed using a novel ternary C-element based on carbon nanotube field-effect transistors (CNTFETs). … WebMay 2, 2013 · By using four additional CNTFETs for ternary operation, a conventional (two-valued) sense amplifier is then used for output response. The contribution of this paper is …

Design of a Ternary Memory Cell Using CNTFETs IEEE …

WebApr 1, 2015 · In this Letter, we have presented a DCAM cell capable of ternary logic storage using four CNT transistors (CNTFETs). We have shown using SPICE … WebThe research of ternary logic can be roughly divided into three aspects: mathematical theory, ternary logic devices and basic logic circuits,and the applied research on ternary logic.The theoretical study of ternary logic contains various theorems and logical systems, providing the theoretical basis for the latter two pieces of research. dakota house west seattle https://wcg86.com

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WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional … WebSep 1, 2012 · This paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to … WebOct 26, 2024 · The ternary logic is observed to be a better alternative to the traditional binary logic because it offers faster computations, smaller chip area, and lesser interconnects. Thus, it allows designing the low-complex, high-speed, and energy-efficient circuits in future digital design. biotic factors in a food web

Schematic of Ternary Multiplier [38] - ResearchGate

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Design of a ternary memory cell using cntfets

A Novel Design of Ternary Level SRAM cell using CNTFET

WebApr 7, 2024 · However, the increased charge mobility also enhances the leakage power. This work uses CNTFET for designing a low-power eight-transistor static random access memory (8T SRAM) cell. The leakage power of the proposed cell is reduced by 2.21 × compared to conventional 6T SRAM at 0.3 V with similar CNTFET parameters.

Design of a ternary memory cell using cntfets

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WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional … WebA memory cell is designed for the construction of a ternary random-access-memory array (TRAM). A ternary decoder and encoder are presented to be the elements of a complete ternary read-only memory (TROM). A modified ternary inverter (MTI) is taken as a unit cell of the ternary memory matrix.

WebJun 1, 2016 · This paper has initially presented two ternary CNTFET SRAMs based on a previously suggested standard ternary inverter. Sizing has been performed by grouping … WebJun 1, 2016 · Two ternary CNTFET SRAM cells (denoted as TC SRAM1 and TC SRAM2) are initially proposed in this paper to address these concerns; features such as sizing, SNM (Static Noise Margin), Power Delay Product (PDP) and write/read times are considered [16].

WebIn this paper, the design of ternary logic gates (standard ternary inverter, ternary NAND, ternary NOR) based on carbon nanotube field effect transistor (CNTFET) and resistive random... WebSep 1, 2012 · This paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to …

WebCarbon nanotube-based transistors (CNTFETs) have been shown to exhibit ambipolar field-effect transistor behavior, allowing circuit designers to easily choose between n - and p-conduction channels by applying correct voltages at a polarity gate.In this paper, we explore this ambipolar behavior of the CNTFET to design both binary and ternary content …

WebJan 24, 2024 · In addition, resistive random access memory (RRAM) is also a feasible option for the design of MVL circuits, owing to its multilevel cell capability that enables the storage of multiple resistance ... dakotah winery chiefland flWebJan 1, 2024 · This paper proposes a novel SEU-hardened ternary SRAM (TSRAM) cell based on an efficient ternary C-element (TC-element). The proposed design uses one supply voltage and dual-threshold CNTFETs, while the previous CNTFET-based TSRAMs need three different threshold voltages or two supply voltages. dakota insurance agency beach ndWebThe CNTFET used for design has different threshold voltages to achieve ternary logic. This multi threshold voltage is obtained by varying the diameter of the CNT used. Chirality of the CNTFETs is utilized for varying the diameter of the CNT and it also avoids the usage of additional power supplies. The channel length used here is 18nm wide. dakotah sport and fitness holiday hoursWebWith the miniaturization of digital integrated circuits, electronic systems with increased functionality and enhanced performance are preferred. Multi-valued logic design is a promising alternative that offers a higher number of data/information which ... biotic factor vocabularyWebDesign of a ternary memory cell using CNTFETs. S Lin, YB Kim, F Lombardi. IEEE transactions on nanotechnology 11 (5), 1019-1025, 2012. 156: 2012: Design of a CNTFET-based SRAM cell by dual-chirality selection. S Lin, YB Kim, F Lombardi. IEEE Transactions on Nanotechnology 9 (1), 30-37, 2009. 114: dakota information technologyWebJan 1, 2024 · A ternary content-addressable memory cell using carbon nanotube field-effect transistors (CNTFETs) is presented in this paper. The proposed ternary CAM cell … dakotah toys coupon codeWebJan 27, 2024 · This paper presents the design of a CNFET-based ternary content-addressable memory (TCAM) cell and rigorously analyzes its performance in terms of power–delay product (PDP) and static noise margin (SNM). The effect of variations of the chiral vector on the performance of the TCAM cell is also comprehensively investigated. biotic fcactors in biodiversity